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PolarHT TM
Power MOSFET
IXTQ69N30P
IXTT69N30P
V DSS
I D25
R DS(on)
= 300 V
= 69 A
≤ 49 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-3P (IXTQ)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
300
300
V
V
V GSS
V GSM
I D25
I DM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 20
± 30
69
200
V
V
A
A
G
D
S
(TAB)
I AR
T C = 25 ° C
69
A
E AR
E AS
T C = 25 ° C
T C = 25 ° C
50
1.5
mJ
J
TO-268 (IXTT)
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
10
500
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
D (TAB)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
l
l
International standard packages
Unclamped Inductive Switching (UIS)
M d
Weight
Mounting torque
TO-3P
TO-268
(TO-3P)
1.13/10 Nm/lb.in.
5.5 g
5.0 g
l
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
300 V
l
l
l
Easy to mount
Space savings
High power density
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
2.5
5.0
± 100
25
250
V
nA
μ A
μ A
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
49
m ?
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DS99078E(12/05)
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